Christophe Gaqière received the PhD. degree in electronic from the University of Lille in 1995. He is currently professor at the University of Lille (Polytech’Lille), and carries out his research activity at the Institut d’Electronique de Microélectronique et de Nanotechnology (IEMN).
The topics concern design, fabrication and characterization of HEMT’s and HBT devices. He works on GaAs, InP, metamorphic HEMT’s and now he is involved in the GaN activities. His main activities are microwave characterizations (small and large signal between 1 and 220 GHz) in order to correlate the microwave performances with the technological and topology parameters. Today, his activities concern mainly the investigation of two-dimensional electronic plasmons for THz solid state GaN based detectors and emitters, AlGaN/GaN nano-wires for microwave applications and MEMS activities based also on GaN. . He was responsible for the microwave characterization part of the common laboratory between Thales TRT and IEMN focus on wide band gap semiconductor (GaN, SiC, and Diamond) rom 2003 up to 2007. At the present time he has in charge the Silicon millimeter wave advanced technologies part of the common lab between ST microelectronics and IEMN. Christophe Gaquière is the author or co-author of more than 100 publications and 200 communications; he referred research projects and review papers in six international journals. He has several collaborations with USA, Russia, Germany, Italia, Spanish, Sweden, Austria and GB in the frame of EU contracts.